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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then

    2. A.
    n + P = ni + Pi
    B.
    n + ni = P + Pi
    C.
    nPi = niP
    D.
    nP = ni Pi

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  2. The energy to cause thermionic emission is supplied by heating the cathode.

    3. A.
    True
    B.
    False

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  3. Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are accelerated towards the collector terminal.

    Reason (R): Emitter base junction in BJT is forward biased.

    4. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  4. Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value.

    Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

    5. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  5. The mass of an electron is nearly

    6. A.
    9.1 x 10-27 kg
    B.
    9.1 x 10-29 kg
    C.
    9.1 x 10-31 kg
    D.
    9.1 x 10-35 kg

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  6. Assertion (A): In a Schottky diode the reverse recovery time is almost zero.

    Reason (R): A Schottky diode has aluminium silicon junction.

    7. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  7. The drain characteristics of JFET are drawn between

    8. A.
    VGS and VDS for different values of drain current
    B.
    drain current and VGS for different values of VDS
    C.
    drain current and VDS for different values of VGS
    D.
    drain current and VGS for one value of VDS

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  8. Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

    9. A.
    ni(T) = (A/T) exp (- E8/kT2)
    B.
    ni(T) = A (- E8/2kT)10
    C.
    ni(T) = A exp (- E8/2kT2)
    D.
    ni(T) = AT3/2 exp (-E8/2kT)

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  9. Electrical contact materials used in switches, brushes and relays must possess

    10. A.
    high thermal conductivity and high melting point
    B.
    low thermal conductivity and low melting point
    C.
    high thermal conductivity and low melting point
    D.
    low thermal conductivity and high melting point

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  10. A JFET behaves as a constant current source when

    11. A.
    VGS = 0
    B.
    VGS is less than pinch off voltage
    C.
    VGS = VDS
    D.
    VGS is more than pinch off voltage

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