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Discussion :: Electronic Devices and Circuits

  1. Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?

    2. A.
    ni(T) = (A/T) exp (- E8/kT2)
    B.
    ni(T) = A (- E8/2kT)10
    C.
    ni(T) = A exp (- E8/2kT2)
    D.
    ni(T) = AT3/2 exp (-E8/2kT)

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    Answer : Option D

    Explanation :

    No answer description available for this question.

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