ECE :: Electronic Devices and Circuits
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In P-N junction, the region containing the uncompensated acceptor and donor ions is called
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In a photodiode the current is due to
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Consider the following statements
- Acceptor level lies close the valence band.
- Donor level lies close to the valence band.
- n type semiconductor behaves as an insulator at 0 K.
- p type semiconductor behaves as an insulator at 0 K.
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If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
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Assertion (A): The conductivity of an n type semiconductor increases with increase in temperature and increase in density of donor atoms.
Reason (R): Diffusion of carriers occurs in semiconductors.
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The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018 ohm-1 m-1 from this it can be concluded that the conductivity of silicon in ohm-1 cm-1 will be nearly
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At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
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The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as
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Which of the following statement about the photo electric emission is incorrect?
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In a semiconductor avalanche breakdown occurs when
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A.
The maximum velocity of emission varies with the frequency of incident light
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B.
The maximum velocity of emission varies with the intensity of light
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C.
The amount of photoelectric emission is directly proportional to the intensity of light
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D.
The quantum yield depends on the frequency and not the intensity of incident light
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