ECE :: Electronic Devices and Circuits
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An increase in junction temperature of a semiconductor diode
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An air gap provided in the iron core of an inductor prevents
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Generally, the gain of a transistor amplifier falls at high frequency due to the
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Which of these has a layer of intrinsic semiconductor?
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Assertion (A): When Diode used as rectifier the reverse breakdown voltage should not be exceeded.
Reason (R): A high inverse voltage can destroy a p-n junction.
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A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?
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Assertion (A): In design of circuit using BJT, a derating factor is used.
Reason (R): As the ambient temperature increases, heat dissipation becomes slower.
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If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is
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In a P type silicon sample, the hole concentration is 2.25 x 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/ cm3 the electron concentration is
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The behaviour of a JFET is similar to that of
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μ =
.
.