ECE :: Electronic Devices and Circuits
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The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?
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Which of these has peak and valley points in v-i curve?
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The scaling factor of an MOS device using constant voltage scaling model, the gate area of the device will be scaled as
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A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be
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Electric breakdown strength of a material depends on its
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The atomic weight of an atom is determined by
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The minimum charge carried by an ion is
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In intrinsic semiconductor at 300 K, the magnitude of free electron concentration in silicon is about
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EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
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A.
more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
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B.
less number of electron hole pairs will be generated in silicon than in germanium at room temperature
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C.
equal number of electron-hole pairs will be generated in both at lower temperatures
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D.
equal number of electron-hole pairs will be generated in both at higher temperatures
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