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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Which of these has 3 layers?

    2. A.
    PIN diode
    B.
    Zener diode
    C.
    Schottky diode
    D.
    Photo diode

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  2. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation

    3. A.
    mv2 = hf - Uw
    B.
    mv2 ≤ hf - Uw
    C.
    mv2 = hf + Uw
    D.
    mv2 ≤ hf + Uw

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  3. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.

    4. A.
    10 mA
    B.
    1.11 mA
    C.
    0.751 mA
    D.
    46.98 mA

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  4. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately

    5. A.
    47 μm
    B.
    33 μm
    C.
    92 μm
    D.
    1.22 μm

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  5. When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.

    6. A.
    True
    B.
    False

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  6. Between which regions does BJT act like switch?

    7. A.
    Cut off and saturation
    B.
    Cut off and forward active
    C.
    Forward active and cut off
    D.
    Saturation and active

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  7. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.

    Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.

    8. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  8. Which of the following elements act as donor impurities?

    1. Gold
    2. Phosphorus
    3. Boron
    4. Antimony
    5. Arsenic
    6. Indium
    Select the answer using the following codes :

    9. A.
    1, 2 and 3
    B.
    1, 2, 4, and 6
    C.
    3, 4, 5 and 6
    D.
    2, 4 and 5

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  9. Light dependent resistor is

    10. A.
    photo resistive device
    B.
    photo voltaic device
    C.
    photo emissive device
    D.
    either (a) or (c)

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  10. The breakdown voltage in a zener diode

    11. A.
    is almost constant
    B.
    is very small
    C.
    may destroy the diode
    D.
    decreases with increase in current

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