ECE :: Electronic Devices and Circuits
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A Darlington emitter follower circuit is some times used in the output stage of a TTL gate in order to
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Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.
Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.
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The drift velocity of electrons and holes is proportional to electric field strength.
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In an n channel MOSFET, the substrate is connected
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Piezoelectric materials serves as a source of
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Which of the following is not a semiconductor?
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At absolute temperature
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If E is electric field intensity, the current density due to field emission is proportional to
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When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow
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Assertion (A): When p-n junction is forward biased, steady current flows.
Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n.
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