ECE :: Electronic Devices and Circuits
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At room temperature the current in an intrinsic semiconductor is due to
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Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
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The most commonly used semiconductor material is
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In which of these is reverse recovery time nearly zero?
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A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
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In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then
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The amount of photoelectric emission current depends on
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Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
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In the circuit of figure the function of resistor R and diode D are
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Current gain = 1 + β = 100.