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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. The I/P impedance (Zi) and the O/P impedance (Zo) of an ideal trans conductance (Voltage controlled current source) amplifier are

    2. A.
    Zi = 0, Zo = 0
    B.
    Zi = 0, Zo = ∞
    C.
    Zi = ∞, Zo = 0
    D.
    Zi = ∞, Zo = ∞

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  2. The relation between thermionic emission current and temperature is known as

    3. A.
    Richardson Dushman equation
    B.
    Langmuir child law
    C.
    Ohm's law
    D.
    Boltzmann's law

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  3. Assertion (A): When forward biased a p-n junction has low resistance.

    Reason (R): The ratio is called dynamic resistance.

    4. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  4. Assertion (A): JFET is a voltage controlled device.

    Reason (R): The drain current can be controlled by controlling VGS.

    5. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  5. For a P-N junction diode, the current in reverse bias may be

    6. A.
    few amperes
    B.
    between 0.5 A and 1 A
    C.
    few milliamperes
    D.
    few micro or nanoamperes

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  6. Greatest mobility can be expected in case of

    7. A.
    holes
    B.
    protons
    C.
    electrons
    D.
    negative ions

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  7. An enhancement mode MOSFET is off when the gate voltage is

    8. A.
    zero
    B.
    negative
    C.
    less than threshold value
    D.
    none of the above

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  8. When atoms are held together by the sharing of valence electrons

    9. A.
    each atom becomes free to move
    B.
    neutrons start shifting
    C.
    they form a covalent bond
    D.
    some of the electrons are lost

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  9. Thermal runaway is not possible in FET, because as the temperature of FET increases.

    10. A.
    the mobility decreases
    B.
    the transconductance increases
    C.
    impedance of the source
    D.
    power dissipation in the chip

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  10. Which of the following pairs of semiconductors and current carriers is correctly matched?

    11. A.
    Intrinsic : number of electrons = number of holes
    B.
    P type : number of electrons > number of holes
    C.
    N type : number of electrons < number of holes
    D.
    Bulk : neither electrons nor holes

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