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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. If E is energy level of electron and EF is Fermi level, then

    2. A.
    all quantum states with E less than EF will be occupied at T = 0
    B.
    all quantum states with E less than EF will be empty at T = 0
    C.
    some quantum states with E less than EF will be occupied at T = 0
    D.
    none of the above

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  2. In the equation i = I0 (eV/ηVT - 1), VT =

    3. A.
    B.
    C.
    T x 11600
    D.

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  3. The range of life time carriers (electrons and holes) is

    4. A.
    1 μs to 100 μs
    B.
    1 nano sec to 1 μs
    C.
    1 nano sec to hundreds of μs
    D.
    none of the above

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  4. In the forward blocking region of a silicon, controlled rectifier, the SCR is

    5. A.
    in the off-state
    B.
    in the ON state
    C.
    reverse biased
    D.
    at the point of breakdown

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  5. Which of the following is a passive component?

    6. A.
    Semiconductor devices
    B.
    Vacuum tube devices
    C.
    Capacitors
    D.
    All of the above

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  6. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at

    7. A.
    higher value of drain current
    B.
    saturation value of drain current
    C.
    zero drain current
    D.
    gate current equal to drain current

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  7. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading is

    8. A.
    0.1 mA
    B.
    C.
    D.

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  8. Measurement of Hall coefficient enables the determination of

    9. A.
    transportation factor decreases and a increases
    B.
    transportation factor increases and a increases
    C.
    transportation factor increases and a decreases
    D.
    transportation factor decreases and a decreases

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  9. The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded that

    10. A.
    The diode is a silicon diode
    B.
    The diode is a germanium diode
    C.
    Break down voltage of the diode is 0.7 V
    D.
    At 1 V rated current will pass through the diode

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  10. The process of deliberately adding impurity to a semi-conductor material is called

    11. A.
    impurification
    B.
    pollution
    C.
    deionisation
    D.
    doping

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