ECE :: Electronic Devices and Circuits
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Assertion (A): The forward resistance of a p-n diode is not constant.
Reason (R): The v-i characteristics of p-n diode is non-linear.
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In a varactor diode the increase in width of depletion layer results in
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In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to
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The work function of a photo surface whose threshold wave length is 1200 A, will be
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When a p-n junction is reverse biased
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If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then
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When a large number of atoms are brought together to form a crystal
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, then 
= eVD/ηVT 
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A.
the energy levels of inner shell electrons are affected appreciably by the presence of other neighbouring atoms.
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B.
The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
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C.
the energy levels of both inner and outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
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D.
none of the above.
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