ECE :: Electronic Devices and Circuits
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Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.
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As comparated to an ordinary p-n diode, the extent of impurity atoms in a tunnel diode
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In active filter circuits, inductances are avoided mainly because they
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When a p-n-p transistor is operating in active region, the current in the n region is due to
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In a JFET
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Consider the following statements: The function of oxide layer in an IC device is to
- mask against diffusion or non implant
- insulate the surface electrically
- increase the melting point of silicon
- produce a chemically stable protective layer
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An extrinsic semiconductor sample has 6 billion silicon atoms and 3 million pentavalent impurity atoms. The number of electrons and holes is
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In a reverse biased p-n junction, the reverse bias is 4V. The junction capacitance is about
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Photoconductive devices uses
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Assertion (A): Oxide coated cathodes are very commonly used.
Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.
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