ECE :: Electronic Devices and Circuits
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Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V
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The cut in voltage of a diode is nearly equal to
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Assertion (A): In a BJT base current is very small.
Reason (R): In a BJT recombination in base region is high.
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A reverse voltage of 18 V is applied to a semiconductor diode. The voltage across the depletion layer is
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Assertion (A): Germanium is more commonly used than silicon.
Reason (R): Forbidden gap in germanium is less than that in silicon.
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Which of the following devices has substrate?
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Assertion (A): The amount of photoelectric emission depends on the intensity of incident light.
Reason (R): Photo electric emission can occur only if frequency of incident light is less than threshold frequency.
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In degenerate p type semiconductor material, the Fermi level,
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, Here n = 
for diffused junction 
.