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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. At very high temperatures the extrinsic semi conductors become intrinsic because

    2. A.
    drive in diffusion of dopants and carriers
    B.
    band to band transition dominants over impurity ionization
    C.
    impurity ionization dominants over band to band transition
    D.
    band to band transition is balanced by impurity ionization

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  2. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

    3. A.
    towards positive terminal
    B.
    towards negative terminal
    C.
    either towards positive terminal or negative terminal
    D.
    towards positive terminal for 1 μs and towards negative terminal for next 1 μs

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  3. Ferrite have

    4. A.
    low copper loss
    B.
    low eddy current loss
    C.
    low resistivity
    D.
    higher specific gravity compared to iron

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  4. In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

    5. A.
    0.5 eV above valence band
    B.
    0.28 eV above valence band
    C.
    0.1 eV above valence band
    D.
    below the valence band

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  5. In an n-p-n transistor, the majority carriers in the base are

    6. A.
    electrons
    B.
    holes
    C.
    both holes and electrons
    D.
    either holes or electrons

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  6. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

    7. A.
    0 to 200 Ω
    B.
    200 - 400 Ω
    C.
    200 Ω and above
    D.
    400 Ω and above

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  7. The number of doped regions in PIN diode is

    8. A.
    1
    B.
    2
    C.
    3
    D.
    1 or 2

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  8. A transistor has two p-n junctions. The batteries should be connected such that

    9. A.
    both junctions are forward biased
    B.
    both junctions are reverse biased
    C.
    one junction is forward biased and the other is reverse biased
    D.
    none of the above

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  9. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

    10. A.
    30 pA
    B.
    40 pA
    C.
    50 pA
    D.
    60 pA

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  10. Recombination produces new electron-hole pairs

    11. A.
    True
    B.
    False

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