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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Work function of oxide coated cathode is much lower than that of tungsten cathode.

    2. A.
    True
    B.
    False

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  2. The word enhancement mode is associated with

    3. A.
    tunnel diode
    B.
    MOSFET
    C.
    JFET
    D.
    photo diode

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  3. In which region of a CE bipolar transistor is collector current almost constant?

    4. A.
    Saturation region
    B.
    Active region
    C.
    Breakdown region
    D.
    Both saturation and active region

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  4. A p-n junction diode has

    5. A.
    low forward and high reverse resistance
    B.
    a non-linear v-i characteristics
    C.
    zero forward current till the forward voltage reaches cut in value
    D.
    all of the above

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  5. Which of the following is true as regards photo emission?

    6. A.
    Velocity of emitted electrons is dependent on light intensity
    B.
    Rate of photo emission is inversely proportional to light intensity
    C.
    Maximum velocity of electron increases with decreasing wave length
    D.
    Both holes and electrons are produced

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  6. The power dissipation in a transistor is the product of

    7. A.
    emitter current and emitter to base voltage
    B.
    emitter current and collector to emitter voltage
    C.
    collector current and collector to emitter voltage
    D.
    none of the above

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  7. The normal operation of JFET is

    8. A.
    constant voltage region
    B.
    constant current region
    C.
    both constant voltage and constant current regions
    D.
    either constant voltage or constant current region

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  8. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm2/sec. The diffusion length is

    9. A.
    0.1 cm
    B.
    0.01 cm
    C.
    0.0141 cm
    D.
    1 cm

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