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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Pentavalent impurity creates n type semiconductor.

    2. A.
    True
    B.
    False

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  2. When a BJT is operated under saturated condition

    3. A.
    both junctions are forward biased
    B.
    both junctions are reverse biased
    C.
    CB junction is forward biased and EB junction is reverse biased
    D.
    EB junction is forward biased and CB junction is reverse biased

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  3. Indium, aluminium, arsenic are all p type impurities.

    4. A.
    True
    B.
    False

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  4. As the temperature of an intrinsic semiconductor material is increased

    5. A.
    additional holes are created in the conduction band
    B.
    protons get excited
    C.
    protons acquire charge
    D.
    energy of the atom is increased

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  5. Hall coefficient KH and charge density r are related as

    6. A.
    KH =
    B.
    KH = r
    C.
    KH =
    D.
    KH = (r)1.2

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  6. When a diode is forward biased, the diode current is

    7. A.
    high
    B.
    low
    C.
    zero
    D.
    low or zero

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  7. In p type semiconductors the conduction due to holes ( = σp ) is (where e = charge on hole, μp is hole mobility and p is hole concentration)

    8. A.
    B.
    C.
    peμp
    D.

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  8. At room temperature, the current in the, intrinsic semiconductor is due to

    9. A.
    holes
    B.
    electrons
    C.
    ions
    D.
    holes and electrons

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  9. Which of these is also called 'hot carrier diode'?

    10. A.
    PIN diode
    B.
    LED
    C.
    Photo diode
    D.
    Schottky diode

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  10. A d.c. power supply has an open circuit voltage of 100 V. When the full load current is drawn, the output drops to 80 V. The percentage voltage regulation is

    11. A.
    97.25%
    B.
    75%
    C.
    50%
    D.
    25%

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