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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. Hall effect can be used

    2. A.
    to find type of semiconductor (whether p or n)
    B.
    to find carrier concentration
    C.
    to measure conductivity
    D.
    all of the above

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  2. The v-i characteristic of an element is shown in below figure the element is

    3. A.
    non-linear, active, non-bilateral
    B.
    linear, active, non-bilateral
    C.
    non-linear, passive, non-bilateral
    D.
    non-linear, active, bilateral

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  3. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as

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  4. The probability giving distribution of electrons over a range of allowed energy levels is known as

    5. A.
    Maxwell's Distribution
    B.
    Fermi-Dirac Distribution
    C.
    Richardson Dushman Distribution
    D.
    none of the above

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  5. Hall coefficient is reciprocal of charge density.

    6. A.
    True
    B.
    False

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  6. It is required to trace the output characteristics of a CE bipolar transistor on a CRO screen. The proper method is

    7. A.
    apply the voltage drop across collector resistance to Y input, disconnect sweep generator and apply VCE to X input
    B.
    apply voltage drop across collector resistance to Y input
    C.
    apply VCE to X input
    D.
    apply VCE to Y input, disconnect the sweep generator and apply voltage drop across collector resistance to X input

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  7. Atomic number of germanium is

    8. A.
    24
    B.
    28
    C.
    32
    D.
    36

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  8. The resistivity of ferrites is

    9. A.
    very much lower than that of the ferromagnetic metals
    B.
    slightly lower than that of the ferromagnetic materials
    C.
    slightly higher than that of the ferromagnetic metals
    D.
    very much higher than that of the ferromagnetic metals

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  9. A JFET

    10. A.
    is current controlled device
    B.
    has low input resistance
    C.
    has high gate current
    D.
    is a voltage controlled device

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  10. In monostable multivibrator

    11. A.
    has no stable state
    B.
    has one stable state
    C.
    has two stable states
    D.
    switches automatically from one state to other state

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