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ECE :: Electronic Devices and Circuits

  1. The band gap of Si at room temperature is

  2. A.
    1.3 eV
    B.
    0.7 eV
    C.
    1.1 eV
    D.
    1.4 eV

  3. Spot the odd one out

  4. A.
    aluminium
    B.
    silver
    C.
    porcelain
    D.
    copper

  5. Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.

  6. A.
    reverse bias and forward bias
    B.
    forward bias and reverse bias
    C.
    reverse bias and reverse bias
    D.
    forward bias and forward bias

  7. Figure represents a

  8. A.
    Tunnel diode
    B.
    PNP transistor
    C.
    Photo sensitive diode
    D.
    Photo emissive diode

  9. If the energy gap of a semiconductor is 1.1 eV, then it would be.

  10. A.
    opaque to the visible light
    B.
    transparent to the visible light
    C.
    transparent to the ultraviolet radiation
    D.
    opaque to the infrared radiation

  11. The primary reason for the widespread use of Si in semiconductor device technology is

  12. A.
    abundance of Si on the surface of earth
    B.
    larger band gap of Si in comparison to Ge
    C.
    favourable properties of Silicon-dioxide (SiO2)
    D.
    lower melting point

  13. If the conductivity of pure germanium is 1.54 siemens/metre, its resistivity in ohm-metre will be nearly

  14. A.
    65
    B.
    6.5
    C.
    0.65
    D.
    0.065

  15. Reluctivity is analogous to

  16. A.
    permeability
    B.
    conductivity
    C.
    resistivity
    D.
    retentivity

  17. The v-i characteristics of a diode may be linear or non linear.

  18. A.
    True
    B.
    False

  19. If a coil has diameter 'd' number of turns 'N' and form factor F then the inductance of the coil is proportional to

  20. A.
    N2dF
    B.
    Nd2F
    C.
    D.