ECE :: Electronic Devices and Circuits
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In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will
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In a centre tap full wave rectifier, 50 V is the peak voltage between the centre tap and one of the ends of the secondary. The maximum voltage across the reverse biased diode will be
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Consider the following statements.
The functions of an oxide layer in an IC device is to- mask against diffusion or ion implant
- insulate the surface electrically
- increase the melting point of silicon
- produce a chemically stable protective layer of these statements.
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If the gate of JFET is reverse biased, the width of depletion region
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If the atomic number of germanium is 32, the number of electrons in the outer most shell will be
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Dielectric loss due to polarisation occurs in
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Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are
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Consider the following statement associated with bipolar junction transistor and JFET
- The former has higher input impedance than the later
- The former has higher frequency stability than the later
- The later has lower noise figure than the former
- The later has higher power rating than the former.
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