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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. In a p-n-p transistor operating in forward active mode

    2. A.
    base is positive with respect to emitter and collector
    B.
    base is negative with respect to emitter and collector
    C.
    emitter is positive with respect to base and base is positive with respect to collector
    D.
    emitter is negative with respect to base and base is positive with respect to collector

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  2. Consider the following statements.

    1. Etching
    2. Exposure to UV radiation
    3. Stripping
    4. Developing
    After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is

    3. A.
    2, 4, 3, 1
    B.
    2, 4, 1, 3
    C.
    4, 2, 1, 3
    D.
    3, 2, 3, 1

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  3. If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

    4. A.
    active region
    B.
    saturated region
    C.
    cut off region
    D.
    inverse mode

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  4. In a triode the potential of grid (with respect to cathode) is usually

    5. A.
    zero
    B.
    negative
    C.
    positive
    D.
    zero or positive

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  5. A varactor diode is

    6. A.
    reverse biased
    B.
    forward biased
    C.
    biased to breakdown
    D.
    unbiased

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  6. Fermi level in intrinsic semiconductor is at the centre of forbidden energy band.

    7. A.
    True
    B.
    False

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  7. In a photo transistor the photocurrent is

    8. A.
    emitter base junction
    B.
    collector base junction
    C.
    collector
    D.
    either (a) or (b)

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  8. In photoelectric emission the maximum kinetic energy of emitted electron is proportional to

    9. A.
    f
    B.
    f
    C.
    f2
    D.
    f3

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  9. In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole, μP = hole mobility, P = hole concentration,

    10. A.
    B.
    C.
    P.e.μP
    D.

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  10. Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resulting electric field inside the speciment will be in

    11. A.
    direction normal to both current and magnetic field
    B.
    the direction of current
    C.
    direction antiparallel to magnetic field
    D.
    an arbitrary direction depend upon conductivity

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