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ECE :: Electronic Devices and Circuits

  1. Which rectifier has the best ratio of rectification?

  2. A.
    Half wave rectifier
    B.
    Full wave rectifier
    C.
    Bridge rectifier
    D.
    Three phase full wave rectifier

  3. Assertion (A): A p-n junction is used as rectifier.

    Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

  4. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

  5. In an integrated circuit the SiO2 layers provide

  6. A.
    electrical connection to external Ckt.
    B.
    physical strength
    C.
    isolation
    D.
    conducting path.

  7. For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by

  8. A.
    40 kΩ
    B.
    2.5 kΩ
    C.
    4.44 kW
    D.
    120 kW

  9. Which of the following are voltage controlled devices?

  10. A.
    Vacum triode
    B.
    FET
    C.
    SCR
    D.
    Both (a) and (b)

  11. Which of the following is known as insulated gate FET?

  12. A.
    JFET
    B.
    MOSFET
    C.
    Both JFET and MOSFET
    D.
    None of the above

  13. Assertion (A): The hybrid p model of a transistor can be reduced to h parameter model and vice versa.

    Reason (R): Hybrid p and h parameter models are interrelated as both of them describe the same device.

  14. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

  15. Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?

  16. A.
    Phosphorus
    B.
    Boron
    C.
    Arsenic
    D.
    Antimony

  17. An insulator will conduct when the

  18. A.
    voltage applied is more than the breakdown voltage
    B.
    temperature is raised to very high level
    C.
    either (a) or (b) above
    D.
    none of the above

  19. Zener breakdown occurs

  20. A.
    due to rapture of covalent band
    B.
    mostly in germanium junctions
    C.
    in lightly doped junctions
    D.
    due to thermally generated minority carriers