ECE :: Electronic Devices and Circuits
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Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.
Reason (R): Capacitance of any layer is inversely proportional to thickness.
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In an n type semiconductor
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In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of donor atoms is increased to three times. The new position of Fermi level will be
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Assertion (A): In a BJT, the base region is very thick.
Reason (R): In p-n-p transistor most of holes given off by emitter diffuse through the base.
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Assertion (A): The behaviour of FET is similar to that of a pentode.
Reason (R): FETs and vacuum triode are voltage controlled devices.
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SCR can be turned on by
- applying anode voltage at a sufficient fast rate
- applying sufficiently large anode voltage
- increasing the temperature of SCR to a sufficiently
- applying sufficiently large gate current.
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In a bipolar transistor
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If for a silicon n-p-n transistor, the base to emitter voltage (VBE) is 0.7 V and the collector to base voltage VCB is 0.2 Volt, then the transistor is operating in the
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A.
recombination in base regions of both n-p-n and p-n-p transistor is low
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B.
recombination in base regions of both n-p-n and p-n-p transistors is high
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C.
recombination in base region of n-p-n transistor is low but that in p-n-p transistor is high
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D.
recombination in base region of p-n-p transistor is low but that in n-p-n transistor is high
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