ECE :: Electronic Devices and Circuits
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The static characteristic of an adequately forward biased P-n junction is a straight line, if the plot is of __________ Vs → versus
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In an n channel JFET
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The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m3. If after doping, the number of majority carriers is 5 x 1020/m3. The minority carrier density is
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A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt (mA). The average power dissipated is
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Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.
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For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about
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The concentration of minority carriers in a semiconductor depends mainly on
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In a bipolar junction transistor the base region is made very thin so that
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Compared to bipolar junction transistor, a JFET has
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= eV/Vr - 1 
= eVs/VR 
= 
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A.
ID, IS and IG are considered positive when flowing into the transistor
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B.
ID and IS are considered positive when flowing into transistor and IG is considered positive when flowing out of it
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C.
ID, IS, IG are considered positive when flowing out of transistor
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D.
IS and IG are considered positive when flowing into transistor and ID is considered positive when flowing out of it
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