ECE :: Electronic Devices and Circuits
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Ferrities are particularly suited for high frequency applications because of their
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In intrinsic semiconductor, the fermi level
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Electromagnetic waves transport
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In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
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When P-N junction is in forward bias, by increasing the battery voltage
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A semiconductor in its purest form called
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Which of the following is an active device?
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Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current.
Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage.
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If E (i.e., available energy state) = EF(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
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