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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18

  1. What is the function of silicon dioxide layer in MOSFETS?

    2. A.
    To provide high input resistance
    B.
    To increase current carriers
    C.
    To provide high output resistance
    D.
    Both (a) and (c)

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  2. The modulation of effective base width by collector voltage is known as Early effect, hence reverse collector voltage

    3. A.
    increases both a and β
    B.
    decrease both a and β
    C.
    increase a but decrease β
    D.
    decrease a but increase β

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  3. Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

    Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.

    4. A.
    Both A and R are true and R is correct explanation of A
    B.
    Both A and R are true but R is not a correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

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  4. Covalent bond energy in Germanium is approximately

    5. A.
    3.8 eV
    B.
    4.7 eV
    C.
    7.4 eV
    D.
    12.5 eV

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  5. Which is correct for a vacuum triode?

    6. A.
    μ = rpgm
    B.
    rp = μgm
    C.
    gm = μrp
    D.
    rpgm

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  6. A 2 bit binary multiplier can be implemented using

    7. A.
    2 I/P only
    B.
    2 I/P XORs and 4 I/P and gates only
    C.
    two 2 I/Ps NOR and one XNOR gate
    D.
    XOR gates and shift Register

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  7. Secondary emission results

    8. A.
    when temperature of metals is raised to a level above the crystallization temperature
    B.
    when metals are subjected to strong magnetic fields
    C.
    when light rays fall on the metal surface
    D.
    when a high velocity beam of electrons strikes as metal surface

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  8. Ohmic range of carbon composition resistors is

    9. A.
    10 to 100 ohms
    B.
    10 to 10 K ohms
    C.
    10 to 200 ohms
    D.
    10 to 25 M ohms

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  9. The depletion layer consists of immobile ions.

    10. A.
    True
    B.
    False

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  10. The output V-I characteristics of an Enhancement type MOSFET has

    11. A.
    only an ohmic region
    B.
    only a saturation region
    C.
    an ohmic region at low voltage value followed by a saturation region at higher voltages.
    D.
    an ohmic region at large voltage values. Preceded by a saturation region at lower voltages.

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