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ECE :: Electronic Devices and Circuits

  1. Figure represents a

  2. A.
    Esaki diode
    B.
    Triac
    C.
    Varactor
    D.
    Gunn diode

  3. Almost all resistors are made in a monolithic integrated circuit

  4. A.
    during the entire diffusion
    B.
    while growing the epitaxial layer
    C.
    during the base diffusion
    D.
    during the collector diffusion

  5. The forbidden energy gap for silicon is

  6. A.
    0.12 eV
    B.
    1.12 eV
    C.
    0.72 eV
    D.
    7.2 eV

  7. In energy band diagram of n type semiconductor, the donor energy level is

  8. A.
    in valence band
    B.
    in conduction band
    C.
    slightly above valence band
    D.
    slightly below conduction band

  9. For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for

  10. A.
    high values of drain current
    B.
    saturation values of drain current
    C.
    zero drain current
    D.
    gate current equal to the drain current

  11. An intrinsic semiconductor (intrinsic electron density = 1016 m-3) is deped with donors to a level of 1022 m-3. What is the hole density assuming all donors to be ionized?

  12. A.
    107 m-3
    B.
    108 m-3
    C.
    1010 m-3
    D.
    106 m-3

  13. The capacitor filter provides poor voltage regulation because

  14. A.
    the increase in ripple with load current causes a decrease in average voltage
    B.
    the increase in ripple with load current causes a increase in average voltage
    C.
    filter promotes ripple at peak voltage
    D.
    none of the above

  15. If Vr is the reverse voltage across a graded P-N Junction, then the junction capacitance cj is proportional to

  16. A.
    (Vr)2
    B.
    (Vr)n
    C.
    (Vr)-n
    D.
    (Vr)3/2

  17. In the schematic representation of bipolar junction transistor, the direction of arrow shows the direction of flow of

  18. A.
    holes
    B.
    electrons
    C.
    holes in pnp and electrons in npn
    D.
    electrons in pnp and holes in npn

  19. Conductivity σ, mobility μ and Hall coefficient KH are related as

  20. A.
    μ = σKH
    B.
    σ = μKH
    C.
    KH = μσ
    D.
    KH =(μσ)1.1