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ECE :: Electronic Devices and Circuits

Electronic Devices and Circuits - Section 1
Electronic Devices and Circuits - Section 2
Electronic Devices and Circuits - Section 3
Electronic Devices and Circuits - Section 4
Electronic Devices and Circuits - Section 5
Electronic Devices and Circuits - Section 6
Electronic Devices and Circuits - Section 7
Electronic Devices and Circuits - Section 8
Electronic Devices and Circuits - Section 9
Electronic Devices and Circuits - Section 10
Electronic Devices and Circuits - Section 11
Electronic Devices and Circuits - Section 12
Electronic Devices and Circuits - Section 13
Electronic Devices and Circuits - Section 14
Electronic Devices and Circuits - Section 15
Electronic Devices and Circuits - Section 16
Electronic Devices and Circuits - section-17
Electronic Devices and Circuits - Section-18
  1. The depletion layer width of Junction

    2. A.

     Decreases with light doping
    B.

     Is independent of applied voltage
    C.

     Is increased under reverse bias
    D.

     Increases with heavy doping

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  2. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

    3. A.

     The number of free electrons increases
    B.

     The number of free electrons increases but the number of holes decreases
    C.

     The number of free electrons and holes increase by the same amount
    D.

     The number of free electrons and holes increase but not by the same amount

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  3. If too large current passes through the diode

    4. A.

     All electrons will leave
    B.

     All holes will freeze
    C.

     Excessive heat may damage the diode
    D.

     Diode will emit light

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  4. Which of the following has highest resistivity?

    5. A.

     Mica
    B.

     Paraffin wax
    C.

     Air
    D.

     Mineral oil

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  5. At room temperature the current in an intrinsic semiconductor is due to

    6. A.

     Holes
    B.

     Electrons
    C.

     Ions
    D.

     Holes and electrons

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  6. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

    7. A.

     100
    B.

     99
    C.

     1.01
    D.

     0.99

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  7. Assertion (A): A p-n junction has high resistance in reverse direction.
    Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

    8. A.

     Both A and R are true and R is correct explanation of A
    B.

     Both A and R are true but R is not a correct explanation of A
    C.

     A is true but R is false
    D.

     A is false but R is true

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  8. In a bipolar transistor, the base collector junction has

    9. A.

     Forward bias
    B.

     Reverse bias
    C.

     Zero bias
    D.

     Zero or forward bias

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  9. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

    10. A.

     True
    B.

     False

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  10. The output, V-I characteristics of an Enhancement type MOSFET has

    11. A.

     Only an ohmic region
    B.

     Only a saturation region
    C.

     An ohmic region at low voltage value followed by a saturation region at higher voltages
    D.

     An ohmic region at large voltage values preceded by a saturation region at lower voltages

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