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ECE :: Analog Electronics

  1. In a transistor amplifier, the reverse saturation current ICO

  2. A.
    Doubles for every 10°C rise in temperature
    B.
    Doubles for every 20°C rise in temperature
    C.
    Increase 100°C with temperature
    D.
    Doubles for every 5°C rise in temperature

  3. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common-emitter short-circuit current gain is

  4. A.
    1
    B.
    199
    C.
    99
    D.
    9.9

  5. In figure Vi may vary from 15 to 20 V and load current may vary from 20 mA to 100 mA. Suitable maximum value of R is

  6. A.
    20 Ω
    B.
    50 Ω
    C.
    100 Ω
    D.
    200 Ω

  7. Assertion (A): A common collector amplifier is used for matching a high impedance source to a low impedance load

    Reason (R): A common collector amplifier has a near unity voltage gain

  8. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

  9. In a crystal oscillator of the Colpitt's oscillator type, the crystal is put is place of the

  10. A.
    resistor R1
    B.
    condenser C2
    C.
    condenser C1
    D.
    inductor L

  11. Astable multivibrator has

  12. A.
    one stable state
    B.
    two stable state
    C.
    two quasi-stable states
    D.
    one quasi stable state

  13. Most small signal transistors are

  14. A.
    N-P-N, silicon, in a plastic package
    B.
    P-N-P, silicon, in a plastic package
    C.
    N-P-N, germanium in a metallic case
    D.
    P-N-P, germanium in a metallic case

  15. A FET is a better clapper than a BJT because it has

  16. A.
    lower off-set voltage
    B.
    higher series ON resistance
    C.
    lower input current
    D.
    higher input impedance

  17. The input gate current of FET is closer to

  18. A.
    few amperes
    B.
    few milli amperes
    C.
    few microamperes
    D.
    negligibly smaller value

  19. When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

  20. A.
    10 μμ
    B.
    100 μμ
    C.
    1000 μμ
    D.
    10000 μμ