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ECE :: Analog Electronics

  1. The gate electrode in the FET corresponds to the

  2. A.
    collector in a bipolar transistor
    B.
    base in a bipolar transistor
    C.
    emitter in a bipolar transistor
    D.
    none of the above

  3. The properties of JFET resemble those of

  4. A.
    thermionic values
    B.
    N-P-N transistors
    C.
    P-N-P transistors
    D.
    unijunction transistor

  5. Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core

    Reason (R): Transformer coupling is very suitable for impedance matching

  6. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

  7. A Hartley oscillator is used for generation

  8. A.
    very low frequency oscillation
    B.
    radio frequency oscillation
    C.
    microwave oscillation
    D.
    audio-frequency oscillation

  9. In a CE class A amplifier the quiescent current and voltage are ICQ and VCEQ. The maximum power output can be

  10. A.
    (VCEQ)(ICQ)
    B.
    C.
    D.
    2 (VCEQ)(ICQ)

  11. The ripple factor of a power supply is


  12. In a P-N-P junction transistor as compared to base region is more heavily doped so that

  13. A.
    leakage current is minimized
    B.
    recombination will be increased in the base region
    C.
    the flow across the base regional is only because of electrons
    D.
    the flow across the base region is mainly because of holes

  14. In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

  15. A.
    magnitude of loop gain
    B.
    onset of non-linearity
    C.
    magnitude of gain
    D.
    β

  16. Which of the following is not valid in case of FETs?

  17. A.
    It has low voltage gain
    B.
    It has high input impedance
    C.
    It has fast switching time
    D.
    It is voltage controlled device

  18. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

  19. A.
    0.99
    B.
    1.01
    C.
    1.001
    D.
    0.990