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ECE :: Analog Electronics

  1. Assertion (A): In CE amplifier the emitter is at ground potential for ac signals

    Reason (R): A CE amplifier has near unity voltage gain

  2. A.
    Both A and R are correct and R is correct explanation for A
    B.
    Both A and R are correct but R is not correct explanation for A
    C.
    A is correct R is wrong
    D.
    A is wrong R is correct

  3. An oscillator requires an amplifier

  4. A.
    with negative feedback
    B.
    with positive feedback
    C.
    with either positive or negative feedback
    D.
    none of the above

  5. A full wave bridge diode rectifier uses diodes having forward resistance of 50 ohms each. The load resistance is also 50 ohms. The voltage regulations is

  6. A.
    20%
    B.
    50%
    C.
    100%
    D.
    200%

  7. The disadvantage of direct coupled amplifiers is

  8. A.
    drift
    B.
    large size of transistor
    C.
    low voltage gain
    D.
    both (b) and (c)

  9. A transistor has a power rating of 8 W for a case temperature of 25°C. If derating factor is 30 mW/°C, the power rating for 55°C, case temperature is

  10. A.
    8 W
    B.
    7.5 W
    C.
    7.1 W
    D.
    6.8 W

  11. In figure VBE = 0.7 V. The base current is

  12. A.
    above 97 μA
    B.
    about 97 mA
    C.
    about 75 μA
    D.
    about 75 mA

  13. An ideal power supply has

  14. A.
    zero internal resistance
    B.
    very high internal resistance
    C.
    high output resistance
    D.
    both (b) and (c)

  15. In a self bias circuit for CE amplifier, the emitter resistance is made three times the original value. The collector current will

  16. A.
    remain the same
    B.
    become three times
    C.
    decrease
    D.
    become one-third

  17. A P-channel MOSFET operating in the enhancement mode is characterized by Vt = - 4 V and IDQ = - 10 mA, when VGSQ = - 5.5 V, what will be VGSQ if IDQ = -15 mA and ID, on = - 16 mA

  18. A.
    - 2 V
    B.
    3 V
    C.
    0.13 V
    D.
    1.3 V