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ECE :: Analog Electronics

  1. A change in the value of the emitter resistance Re in a differential amplifier

  2. A.

     Affects the difference mode gain Ad

    B.

     Affects the common mode gain Ac

    C.

     Affects both Ad and Ac

    D.

     Does not effect either Ad and Ac


  3. The bandwidth of an RF tuned amplifier is dependent on

  4. A.

     Q –factor of the tuned o/p circuit

    B.

     Q –factor of the tuned i/p circuit

    C.

     Quiescent operating point

    D.

     Q-factor of the o/p and i/p circuits as well as quiescent operating point


  5. Introducing a resistor in the emitter of a common amplifier stabilizes the dc operating point against variations in

  6. A.

     Only the temperature

    B.

     only the β of the transistor

    C.

     Both Temperature & β

    D.

     None of the above


  7. The MOSFET switch in its onstate may be considered equivalent to

  8. A.

     Resistor

    B.

     Inductor

    C.

     Capacitor

    D.

     Battery


  9. Most of the linear ICs are based on the two-transistor differential amplifier because of its

  10. A.

     Input voltage dependent linear transfer characteristic

    B.

     High voltage gain

    C.

     High input resistance

    D.

     High CMRR


  11. The horizontal intercept of dc load line is the same as ideal

  12. A.

     Cut off point

    B.

     Saturation point

    C.

     Operating point

    D.

     Quasi saturation point


  13. A 741-type OP-amp has a gain-bandwidth product of 1MHz.A non-inverting amplifier using this opamp & having a voltage gain of 20db will exhibit -3db bandwidth of

  14. A.

     50 KHz

    B.

     100 KHz

    C.

     1000/17 KHz

    D.

     1000/7.07 KHz


  15. A differential amplifier is invariably used in the i/p stage of all OP-amps.This is dome basically to provide the OP-amps with a very high

  16. A.

     CMRR

    B.

     Bandwidth

    C.

     Slew rate

    D.

     Open-loop gain


  17. The early effect in a bipolar junction transistor is caused by

  18. A.

     Fast turn-on

    B.

     Fast turn-off

    C.

     Large collector-base reverse bias

    D.

     Large emitter-base forward bias


  19. In a transistor leakage current mainly depends on

  20. A.

     Doping of base

    B.

     Size of emitter

    C.

     Rating of transistor

    D.

     Temperature