Home / EEE / FET(Field Effect Transistors) :: section-1

EEE :: FET(Field Effect Transistors)

  1. ICEO = () ICBO

  2. A.

     ß

    B.

     1 + a

    C.

     1 + ß

    D.

     none of the above


  3. In a pnp transistor, the current carriers are ___________

  4. A.

     acceptor ions

    B.

     donor ions

    C.

     free electrons

    D.

     holes


  5. The base of a transistor is ___________ doped

  6. A.

     heavily

    B.

     moderately

    C.

     lightly

    D.

     none of the above


  7. The collector of a transistor is ___________ doped

  8. A.

     heavily

    B.

     moderately

    C.

     lightly

    D.

     none of the above


  9. The emitter of a transistor is ___________ doped

  10. A.

     lightly

    B.

     heavily

    C.

     moderately

    D.

     none of the above


  11. The base resistor method is generally used in

  12. A.

     Amplifier circuits

    B.

     Switching circuits

    C.

     Rectifier circuits

    D.

     None of the above


  13. In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

  14. A.

     2000 Ω

    B.

     1400 Ω

    C.

     800 Ω

    D.

     1600 Ω


  15. The number of depletion layers in a transistor is ___________

  16. A.

     four

    B.

     three

    C.

     one

    D.

     two


  17. The element that has the biggest size in a transistor is ___________

  18. A.

     collector

    B.

     base

    C.

     emitter

    D.

     collector-base-junction


  19. The input impedance of a transistor is ___________

  20. A.

     high

    B.

     low

    C.

     very high

    D.

     almost zero