Home / EEE / FET(Field Effect Transistors) :: section-1

EEE :: FET(Field Effect Transistors)

  1. The value of ß for a transistor is generally ___________

  2. A.

     1

    B.

     less than 1

    C.

     between 20 and 500

    D.

     above 500


  3. If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ___________

  4. A.

     6 mA

    B.

     2 mA

    C.

     3 mA

    D.

     1 mA


  5. The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________

  6. A.

     Limit the maximum emitter current

    B.

     Provide base-emitter bias

    C.

     Limit the change in emitter current

    D.

     None of the above


  7. For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line

  8. A.

     The end point

    B.

     Middle

    C.

     The maximum current point

    D.

     None of the above


  9. The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

  10. A.

     One hundredth

    B.

     One tenth

    C.

     One thousandth

    D.

     One millionth


  11. The Q of an LC circuit is given by ___________

  12. A.

     2pfr x R

    B.

     R / 2pfrL

    C.

     2pfrL / R

    D.

     R2/2pfrL


  13. Tuned class C amplifiers are used for RF signals of ___________

  14. A.

     Low power

    B.

     High power

    C.

     Very high power

    D.

     None of the above


  15. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by ___________

  16. A.

     100 µA

    B.

     25 µA

    C.

     20 µA

    D.

     50 µA


  17. A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?

  18. A.

     105 kΩ

    B.

     530 kΩ

    C.

     315 kΩ

    D.

     None of the above


  19. In a npn transistor, ___________ are the minority carriers

  20. A.

     free electrons

    B.

     holes

    C.

     donor ions

    D.

     acceptor ions