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EEE :: FET(Field Effect Transistors)

  1. As the temperature of a transistor goes up, the base emitter resistance ___________

  2. A.

     decreases

    B.

     increases

    C.

     remains the same

    D.

     none of the above


  3. A transistor has ___________

  4. A.

     one pn junction

    B.

     two pn junctions

    C.

     three pn junctions

    D.

     four pn junctions


  5. The collector-base junction in a transistor has ___________

  6. A.

     forward bias at all times

    B.

     reverse bias at all times

    C.

     low resistance

    D.

     none of the above


  7. If biasing is not done in an amplifier circuit, it results in ___________

  8. A.

     Decrease in the base current

    B.

     Unfaithful amplification

    C.

     Excessive collector bias

    D.

     None of the above


  9. The disadvantage of voltage divider bias is that it has ___________

  10. A.

     High stability factor

    B.

     Low base current

    C.

     Many resistors

    D.

     None of the above


  11. The voltage gain of a tuned amplifier is ___________ at resonant frequency

  12. A.

     Minimum

    B.

     Maximum

    C.

     Half-way between maximum and minimum

    D.

     Zero


  13. In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?

  14. A.

     7 V

    B.

     3 V

    C.

     5 V

    D.

     8 V


  15. In series resonance, there is ___________

  16. A.

     Voltage amplification

    B.

     Current amplification

    C.

     Both voltage and current amplification

    D.

     None of the above


  17. In parallel resonance, there is ___________

  18. A.

     Both voltage and current amplification

    B.

     Voltage amplifications

    C.

     Current amplification

    D.

     None of the above


  19. The zero signal IC is generally ___________ mA in the initial stages of a transistor amplifier

  20. A.

     4

    B.

     1

    C.

     3

    D.

     More than 10