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EEE :: FET(Field Effect Transistors)

  1. The disadvantage of base resistor method of transistor biasing is that it ___________

  2. A.

     Is complicated

    B.

     Is sensitive to changes in ß

    C.

     Provides high stability

    D.

     None of the above


  3. The dimensions of L/CR are that of ___________

  4. A.

     Farad

    B.

     Henry

    C.

     Ohm

    D.

     None of the above


  5. IC = [a / (1 - a )] IB + [ / (1 - a )]

  6. A.

     ICBO

    B.

     ICEO

    C.

     IC

    D.

     IE


  7. In a transistor, the base current is about ___________ of emitter current

  8. A.

     25%

    B.

     20%

    C.

     35%

    D.

     5%


  9. At series resonance, voltage across L is ___________ voltage across C

  10. A.

     Equal to but opposite in phase to

    B.

     Equal to but in phase with

    C.

     Greater than but in phase with

    D.

     Less than but in phase with


  11. A transistor is a ___________ operated device

  12. A.

     current

    B.

     voltage

    C.

     both voltage and current

    D.

     none of the above


  13. Transistor biasing is done to keep ___________ in the circuit

  14. A.

     Proper direct current

    B.

     Proper alternating current

    C.

     The base current small

    D.

     Collector current small


  15. A tuned amplifier is used in ___________ applications

  16. A.

     Radio frequency

    B.

     Low frequency

    C.

     Audio frequency

    D.

     None of the above


  17. The most commonly used transistor arrangement is ___________ arrangement

  18. A.

     common emitter

    B.

     common base

    C.

     common collector

    D.

     none of the above


  19. Transistor biasing represents ___________ conditions

  20. A.

     a.c.

    B.

     d.c.

    C.

     both a.c. and d.c.

    D.

     none of the above