Home / ECE / Exam Questions Paper :: Section 16

ECE :: Exam Questions Paper

  1. In which direction is the plane wave E = 50 sin (108t + 2z) V/m (where is the unit vector in y-direction), travelling?

  2. A.
    along y direction
    B.
    along -y direction
    C.
    along z direction
    D.
    along -z direction

  3. Which one of the following compounds is widely used for making ferrites?

  4. A.
    FeO
    B.
    CuO
    C.
    MgO
    D.
    Fe2O3

  5. Assertion (A): Cut-in voltage for Germanium diode is greater than that for silicon diode.

    Reason (R): Germanium diode has a higher reverse saturation current than silicon diode.

  6. A.
    Both A and R are individually true and R is the correct explanation of A
    B.
    Both A and R are individually true but R is not the correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true

  7. Laplace transform of unit triplet function is __________ .

  8. A.
    1
    B.
    s
    C.
    s2
    D.

  9. What can be the maximum dimension of an array in C language program?

  10. A.
    3
    B.
    4
    C.
    5
    D.
    It is compiler dependent

  11. Choose the correct statement

  12. A.
    The reflection coefficient (r) of a transmission line is greater than 1
    B.
    r varies from 0 to ∞
    C.
    r is less than or equal to 1
    D.
    r varies from - ∞ to + ∞

  13. Which of the following modes can exist in a rectangular waveguide?

  14. A.
    TM10
    B.
    TE10
    C.
    TM00
    D.
    TM01

  15. For plane wave propagating in free space or two conductor transmission line, what must be the relationship between the phase velocity vp , the group velocity vg and speed of light c?

  16. A.
    vp > c > vg
    B.
    vp < c < vg
    C.
    vp = c = vg
    D.
    vp < vg < c

  17. The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10-19C, thermal voltage = 26mV and electron mobility = 1350 cm2/V-s

    The magnitude of the electric field at x = 0.5 μm is

  18. A.
    1 kV/cm
    B.
    5 kV/cm
    C.
    10 kV/cm
    D.
    26 kV/cm

  19. Assertion (A): The small signal analysis of a transistor amplifier is done to obtain the current gain, voltage gain and the conversion efficiency of an amplifier.

    Reason (R): The small signal analysis of a transistor amplifier uses the small signal parameters of the transistor.

  20. A.
    Both A and R are individually true and R is the correct explanation of A
    B.
    Both A and R are individually true but R is not the correct explanation of A
    C.
    A is true but R is false
    D.
    A is false but R is true