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EEE :: FET(Field Effect Transistors)

  1. The pinch-off voltage in a JFET is analogous to ___________ voltage in a vacuum tube

  2. A.

     anode

    B.

     cathode

    C.

     grid cut off

    D.

     none of the above


  3. At cut-off, the JFET channel is ___________

  4. A.

     at its widest point

    B.

     completely closed by the depletion region

    C.

     extremely narrow

    D.

     reverse baised


  5. For VGS = 0 V, the drain current becomes constant when VDS exceeds

  6. A.

     cut off

    B.

     VDD

    C.

     VP

    D.

     o V


  7. When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage

  8. A.

     decreases

    B.

     increases

    C.

     remains constant

    D.

     none of the above


  9. A n-channel D-MOSFET with a positive VGS is operating in ___________

  10. A.

     the depletion-mode

    B.

     the enhancement-mode

    C.

     cut off

    D.

     saturation


  11. ___________ has the lowest noise-level

  12. A.

     triode

    B.

     ordinary trnsistor

    C.

     tetrode

    D.

     JFET


  13. Which of the following devices has the highest input impedance?

  14. A.

     JFET

    B.

     MOSFET

    C.

     Crystal diode

    D.

     ordinary transistor


  15. The transconductance of a JFET ranges from ___________

  16. A.

     100 to 500 mA/V

    B.

     500 to 1000 mA/V

    C.

     0.5 to 30 mA/V

    D.

     above 1000 mA/V


  17. In a p-channel JFET, the charge carriers are ___________

  18. A.

     electrons

    B.

     holes

    C.

     both electrons and holes

    D.

     none of the above


  19. The pinch-off voltage of a JFET is about ___________

  20. A.

     5 V

    B.

     0.6 V

    C.

     15 V

    D.

     25 V