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ECE :: Power Electronics

Power Electronics - Section 1
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Power Electronics - Section 4
Power Electronics - Section 5
Power Electronics - Section 6
Power Electronics - Section 7
Power Electronics - Section 8
Power Electronics - Section 9

  1. Which of these devices have four layers?

    2. A.
    UJT
    B.
    SCR
    C.
    TRIAC
    D.
    SCR and TRIAC

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  2. When UJT is used for thyristor gate signal, the output of UJT is

    3. A.
    sine wave
    B.
    square wave
    C.
    saw tooth wave
    D.
    either (a) or (c)

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  3. The stud in a stud mounted SCR acts as

    4. A.
    anode
    B.
    cathode
    C.
    gate
    D.
    anode or cathode

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  4. In a single phase full wave regulator feeding R-L load, short gate pulse are not suitable.

    5. A.
    True
    B.
    False

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  5. Half bridge and full bridge inverters of one type use different commutation methods.

    6. A.
    True
    B.
    False

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  6. In rectifier circuits, the rms value of ac component of output voltage is equal to

    7. A.
    Vrms
    B.
    0.5 Vrms
    C.
    (Vrms - Vdc)0.5
    D.
    (Vrms2 - Vdc2)0.5

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  7. A UJT exhibits negative resistance characteristics when

    8. A.
    Current is less than valley current
    B.
    Current is less than peak current
    C.
    Current is more than peak current but less than valley current
    D.
    None of the above

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  8. A dc chopper feeds an RLE load and has a duty cycle of 1. The load current will be such that

    9. A.
    B.
    Imax > Imin
    C.
    Imin > 0
    D.
    Imin < 0

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  9. In rectifier circuits, ripple factor RF and form factor FF are related as

    10. A.
    RF = (FF2 - 1)0.5
    B.
    RF = FF
    C.
    RF = FF - 1
    D.
    RF = (FF - 1)0.5

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  10. If we connect two silicon unilateral switches in anti- parallel we get

    11. A.
    SCR
    B.
    SBS
    C.
    SCS
    D.
    UJT

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