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  1. A phosphorous doped silicon semiconductor ( doping density: 1017/cm3) is heated from 100oC to 200oC. Which one of the following statements is CORRECT ?
    2. A.
    Position of Fermi level moves towards conduction band
    B.
    Position of dopant level moves towards conduction band
    C.
    Position of Fermi level moves towards middle of energy gap
    D.
    Position of dopant level moves towards middle of energy gap

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    Answer : Option C

    Explanation :

    -NA-

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