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Discussion :: GATE ECE

  1. The small-signal resistance (i.e., dVB/dID) in kΩ offered by the n-channel MOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device transconductance parameter kN = μn C'OX (W/L) = 40 μA/V2 threshold voltage VTN = 1 V, and neglect body effect and channel length modulation effects)

    2. A.
    12.5
    B.
    25
    C.
    50
    D.
    100

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    Workspace

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    Answer : Option B

    Explanation :

    -NA-

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