Menu
Home / GATE 2017-2018 / GATE ECE :: Discussion

Discussion :: GATE ECE

  1. In the three dimensional view of a silicon n-channel MOS transistor shown below, δ = 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permitivities of Si and SiO2 respectively, are 11.7 and 3.9, and ε0 = 8.9 * 10-12 F/m.

    The gate-source overlap capacitance is approximately
    2. A.
    0.7 fF
    B.
    0.7 pF
    C.
    0.35 fF
    D.
    0.24 pF

    View Answer

    Workspace

    View Answer

    Answer : Option A

    Explanation :

    -NA-

Write your comments here:

Be The First To Comment