ECE :: Materials and Components
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Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium.
Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.
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The real part of complex dielectric constant and tanδ for a dielectric are 2.1 and 5 x 10-4 at 100 Hz respectively. The imaginary part of dielectric constant at 100 Hz is
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As the temperature of semiconductor is increased
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In anti-ferromagnetic materials, the graph of susceptibility versus temperature shows a sharp maximum at a certain temperature. This temperature is known as
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A parallel plate capacitor has area of plate A and plate separation d. Its capacitance is C. A metallic plate P of area A and negligible thickness is added as shown in Figure. The new value of capacitance is
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The wavelength of light emitted by GaAs laser is 8670 x 10-10 m. If h = 6.626 x 10-34 Js, velocity of light = 3 x 108 m/s and eV = 1.602 x 10-19 J, the energy gap in GaAs is
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A piece of copper and another piece of Germanium are cooled from 30°C to 80 K. The resistance of
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The direction of force an a conductor carrying current and lying in a magnetic field can be found by using
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