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Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = 1 x 10¹⁷ cm^-3
Depletion width on the n-side = 0.1 μm
Depletion width on the p-side = 1.0 μm
Intrinsic carrier concentration = 1.4 x 10¹⁴F. cm^-1.
Thermal voltage = 26mV
Permittivity of free space = 8.85 x 10^-14F. cm^-1.
Dielectric constant of silicon = 12. A built in potential of the junction.