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  1. Epitaxial growth is used in ICs

  2. A.
    because it produces low parasitic capacitance
    B.
    because it yields back to back isolating pn junction
    C.
    to grow single crystal n doped silicon on a single crystal p type substrate
    D.
    to grow selectively single crystal p doped silicon of one resistivity on a p type substrate of a different resistivity

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    Answer : Option D

    Explanation :

    No answer description available for this question.


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