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  1. A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is tp0 = 5 μs. The thermal equilibrium generation rate of hole is:

    2. A.
    1.125 x 109 cm-3 s-1
    B.
    0.625 x 109 cm-3 s-1
    C.
    4.5 x 109 cm-3 s-1
    D.
    2.25 x 109 cm-3 s-1

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    Answer : Option D

    Explanation :

    Then thermal generation rate

    = 2.25 x 109 cm3 S-1 .

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