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  1. Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5 x 1010/cm3 and the value of to be 25mV at 300K. Compared to undoped silicon, the Fermi level of doped silicon

    2. A.
    goes down by 0.13 eV
    B.
    goes up by 0.13 eV
    C.
    goes down by 0.427 eV
    D.
    goes up by 0.427 eV

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    Answer : Option C

    Explanation :

    Use EF - Ev =

    Since it is doped with acceptor impurity, Fermi level will shift down.

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